发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 <p>PURPOSE:To uniform the spread of a resin layer to coat a chip surface, and maintain a specified thickness, by forming grooves having an U-shaped or V-shaped section on an insulating film on either the periphery of external electrodes or an element isolation region between external electrodes adjacent to each other. CONSTITUTION:A chip 1 is provided with the following; a chip center part 4 turning to an element forming region, external electrodes 2 formed on the outer periphery of the chip center part 4, chip corner parts, and grooves 3 having an U-shaped or V-shaped section formed between the external electrodes 2 and on the periphery of the external electrodes 2. In this chip, the external electrodes 2 and leads of a case are connected by bonding wires 8. Then liquid polyimide resin whose quantity is optimum for chip size is dripped on the chip surface, to form a resin layer 9. The resin which spreads between the external electrodes 2 and in the vicinity of the chip corners, reaches uneven region formed by the gooves 3. The whole part of the chip has almost uniform wettability by virtue of the gooves 3, so that the resin layer 9 has a uniform thickness and covers the whole part of the chip.</p>
申请公布号 JPH01108752(A) 申请公布日期 1989.04.26
申请号 JP19870267289 申请日期 1987.10.21
申请人 NEC CORP 发明人 KATOU TETSUHIRO
分类号 G11C29/04;G11C15/00;G11C29/00;H01L21/312;H01L23/29;H01L23/31;H01L29/06 主分类号 G11C29/04
代理机构 代理人
主权项
地址