Method of producing a planar self-aligned heterojunction bipolar transistor.

摘要

Method of producing a planar self-aligning emitter-base system in which a semiconductor layer structure (2, 3, 4, 5, 6) which is standard for heterobipolar transistors is grown on a substrate (1), then the base regions are etched by the masking technique and provided with the base metallisation (8) and a first dielectric layer (9), insulation implants (10) and spacers (14) are produced to electrically insulate the base, and then the emitter region is provided with the emitter metallisation (15) and a third dielectric layer (16).