发明名称 MANUFACTURE OF PHOTOSENSOR
摘要 PURPOSE:To improve reproducibility of half tone, by heat-treating a semiconductor thin film comprising CdS-CdSe on a substrate, activating the film optoelectronically, providing counter electrodes, attaching a small amount of Ag chemically, and diffusing said Ag into the semiconductor thin film. CONSTITUTION:A semiconductor thin film comprising either of CdS-CdSe or solid solution of CdS-CdSe is formed on an insulating substrate. The thin film is exposed to vapor of CdCl2 at a high temperature and activated optoelectronically. Thereafter counter electrodes are provided. The device is further immersed into aqueous solution including Ag ions. Thus a small amount of Ag is chemically attached on the surface. The Ag is diffused into the semiconductor thin film. At this time, after the electrodes are formed and the Ag is attached, the device is heat-treated at 150-400 deg.C in a neutral atmosphere or in an atmosphere including a small amount of oxygen. Thus the reproducibility of half tone is improved.
申请公布号 JPH01109775(A) 申请公布日期 1989.04.26
申请号 JP19870266589 申请日期 1987.10.23
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 IKEDA KOSUKE;WADA HIROKO;YOSHIGAMI NOBORU
分类号 H01L31/0264;H01L31/0296;H01L31/18 主分类号 H01L31/0264
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