| 摘要 |
In the fabrication of VLSI MOSFET circuits, the sheet resistance of polysilicon gates and interconnects and the sheet resistance of shallow source and drain junctions are reduced by using refractory metal or refractory metal silicide. To optimize the use of refractory metal or silicide at the junction and gate regions, the refractory metal or silicide (26) at the gate (24, 26) is made thicker than a junction silicide layer (30) the source and drain (16, 18) by first forming a gate (24, 26) having a refractory metal or silicide content and subsequently forming a thin layer (30, 32) of refractory metal or silicide over the source, drain, and gate regions. <IMAGE> |
