MODIFICATION OF INTERFACIAL FIELDS BETWEEN DIELECTRICS AMODIFICATION OF INTERFACIAL FIELDS BETWEEN DIELECTRICS AND SEMICONDUCTORS ND SEMICONDUCTORS,申请号EP19880115112-传众专利搜索

发明名称	MODIFICATION OF INTERFACIAL FIELDS BETWEEN DIELECTRICS AMODIFICATION OF INTERFACIAL FIELDS BETWEEN DIELECTRICS AND SEMICONDUCTORS ND SEMICONDUCTORS
摘要
申请公布号	EP0308814(A3)	申请公布日期	1989.04.26
申请号	EP19880115112	申请日期	1988.09.15
申请人	NATIONAL SEMICONDUCTOR CORPORATION	发明人	ARONOWITZ, SHELDON;ANAND, KRANTI
分类号	H01L29/06;H01L21/28;H01L21/3115;H01L21/316;H01L21/324;H01L29/51;H01L29/78;(IPC1-7):H01L21/31;H01L29/62	主分类号	H01L29/06
代理机构		代理人
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