| 摘要 |
A method for manufacturing a contact hole of a semiconductor device is provided to stably form a top-on TiN structure regardless of a surface step of a dielectric by additionally forming an etch stop layer between the dielectric and performing an etching process on both sides of the etch stop layer, respectively. A wire pattern including a Ti/TiN layer(34) is formed on an upper portion of a substrate(31). A subsequent interlayer dielectric and an etch stop layer(37) having an etch selectivity are formed on the whole surface of the resultant structure including the wire pattern. An interlayer dielectric is formed on the etch stop layer. The interlayer dielectric is etched using the etch stop layer as a target to form an open unit(41). The etch stop layer under the open unit and a part of the Ti/TiN layer are etched. The etch stop layer is nitride or amorphous carbon. The etch stop layer and the part of the Ti/TiN layer are etched by in-situ method in the same chamber.
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