| 发明名称 |
Pulsed plasma process for treating a substrate |
| 摘要 |
In a pulsed radio frequency plasma deposition process the pulse repetition frequency is matched to the gas exchange rate. This is achieved by using a pulse width of 50 to 500 microseconds and a pulse repetition rate corresponding to the time within which gas is exchanged in the reaction region.
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| 申请公布号 |
US4824690(A) |
申请公布日期 |
1989.04.25 |
| 申请号 |
US19870117923 |
申请日期 |
1987.11.03 |
| 申请人 |
STANDARD TELEPHONES AND CABLES PUBLIC LIMITED COMPANY |
发明人 |
HEINECKE, RUDOLF A. H.;OJHA, SURESH M.;LLEWELLYN, IAN P. |
| 分类号 |
B01J19/08;C23C16/50;C23C16/515;C23F4/00;(IPC1-7):B05D3/06 |
主分类号 |
B01J19/08 |
| 代理机构 |
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