发明名称 SPUTTERING TARGET
摘要 PURPOSE:To form a thin magnetic film having high C/N value (carrier to noise ratio) and also to improve the use efficiency of a target by limiting the maximum grain size of crystalline grains in the composition of an alloy constituting a target. CONSTITUTION:A target for sputtering casting alloy has a composition principally composed of rare earths - transition metals. The maximum grain size of 50% of crystalline grains in the above composition is regulated to <=5mm. Since this target causes fluctuations in composition at the time of casting, raw materials are weighed by using the values obtained by correcting the above fluctuations as weighed values, and the raw materials are subjected to vacuum melting in a crucible, and then, the molten alloy is agitated and poured into a mold to undergo casting. This target has high use efficiency and is capable of forming a thin magnetic film having high C/N value.
申请公布号 JPH01108370(A) 申请公布日期 1989.04.25
申请号 JP19870264565 申请日期 1987.10.20
申请人 SEIKO EPSON CORP 发明人 YAMAGISHI TOSHIHIKO;AOYAMA AKIRA
分类号 C23C14/34 主分类号 C23C14/34
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