| 摘要 |
A basic cell for semiconductor integrated circuit devices comprises at least one MOS transistor of a first type of electric conduction and at least one MOS transistor of a second type of electric conduction. On both sides of the source/drain region of the MOS transistor of the first type, diffusion contact regions of the second type of electric conduction are disposed, and, on both sides of the source/drain region of the MOS transistor of the second type, diffusion contact regions of the first type of electric conduction are disposed. In the respective MOS transistors, gate electrode contact regions are provided on either side of the diffusion contact regions. These MOS transistors are symmetrical with respect to the transverse axis running through the center of the respective source/drain regions. Disclosure is also made of a semiconductor integrated circuit device of the master slice type including a plurality of such basic cells arranged at regular intervals.
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