发明名称 |
Radiation hardened semiconductor devices |
摘要 |
Disclosed are semiconductor devices and circuits which are highly resistant to the effects of radiation. A thin conductive layer, which is biased at substrate potential, and a thin oxide are provided under the usual field oxide of the devices. The conductive layer shields the semiconductor substrate from the effects of charge generation in the field oxide due to radiation absorption.
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申请公布号 |
US4825278(A) |
申请公布日期 |
1989.04.25 |
申请号 |
US19870020771 |
申请日期 |
1987.03.02 |
申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY AT&T BELL LABORATORIES |
发明人 |
HILLENIUS, STEVEN J.;LYNCH, WILLIAM T.;MANCHANDA, LALITA |
分类号 |
H01L21/765;H01L23/58;H01L23/60;H01L29/06;H01L29/40;(IPC1-7):H01L29/40 |
主分类号 |
H01L21/765 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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