| 摘要 |
PURPOSE:To reduce the quantity of ion beam irradiation required to correct a mask defect by arranging a mask substrate slantingly to the incidence direction of an ion beam. CONSTITUTION:The mask substrate 7 is arranged rotatably, so the incidence direction of the ion beam 6 to the mask substrate 7 is changeable. For the purpose, the incidence angle of the ion beam 6 is changed to increase the etching speed of a thin film constituting a mask pattern without increasing the quantity of ion irradiation. Consequently, the mask pattern can be corrected with the small quantity of ion irradiation. |
