发明名称 |
Dual glass contact process |
摘要 |
A method for forming contact openings in semiconductor devices. In borosilicate glass layers deposited over the gate and drain area of a device, followed by a borophosphosilicate glass layer. After masking with photoresist and defining openings, the borophosphosilicate glass is isotropically etched to undercut the resist layer. A plasma etch is utilized to anisotropically etch the borosilicate glass layer and expose the surface of the drain area. After the photoresist is stripped away, a reflow step is employed to reduce the sharp edges of the glass layer and result in a sloped contact opening profile. Good metal coverage is achieved while maintaining isolation of the gate.
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申请公布号 |
US4824767(A) |
申请公布日期 |
1989.04.25 |
申请号 |
US19870057240 |
申请日期 |
1987.06.02 |
申请人 |
INTEL CORPORATION |
发明人 |
CHAMBERS, STEPHEN T.;LUCE, STEPHEN T. |
分类号 |
H01L21/28;H01L21/31;H01L21/3105;H01L21/316;H01L21/3205;H01L21/768;(IPC1-7):G03C5/00 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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