| 摘要 |
<p>PURPOSE:To form a base area consisting of a diffusion layer with shallow light receiving area and a deep contact area with one diffusion by forming a CVD film on the substrate surface where the P diffusion layer was formed on the entire base area, by eliminating the part corresponding to the optic area of base area of CVD film by the photoetching method, and by performing drive-in of P-diffusion layer. CONSTITUTION:A SiO2 film 3 is formed on the surface of an N epitaxial layer 2 which was formed on an N<+> substrate 1 and a window corresponding to the entire base area including the optic area contact area, and guard wing area is opened by the photoetching method, B is introduced from the window, and a P diffusion layer 4 id formed. Then, the CVD film is formed on the surface of substrate by the CVD method, the part corresponding to the optic area of base area of CVD film which was formed by the photoetching method is removed, and the driven-in of the P-diffusion layer 4 is performed. In this case, the surface P concentration of the part where the CVD film of the diffusion layer 4 was removed decreases so that the light receiving area does not become deep even if the P diffusion layer 4 other than the light receiving are a becomes deep and the P diffusion layer 4 of desired construction can be obtained.</p> |
