发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain insulation of the surface of a Cu wire and to prevent an electric short-circuit by wire bonding the electrodes of a semiconductor chip to external leads, then oxidizing the surface of the wire, and coating it with liquid insulator. CONSTITUTION:Cu poles are formed at both ends of an Au wire 1 by Cu pole bonding technique, the pole of one end is bonded to external lead 2, and the pole of the other end is bonded to the electrode 10 of a chip. After the bonding is finished, it is allowed to stand for 1 hour in an oxidative atmosphere at approx. 100 deg.C, thereby oxidizing the surface of the Cu wire to form an oxide (CuO2) film 8. Since the oxide film itself has electric insulation, it can prevent an electric short-circuit due to the contact of the wire to the chip and the wires each other.
申请公布号 JPH01105553(A) 申请公布日期 1989.04.24
申请号 JP19870261592 申请日期 1987.10.19
申请人 HITACHI LTD 发明人 KAWAI YOSHIAKI
分类号 H01L23/50;H01L21/60 主分类号 H01L23/50
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