| 摘要 |
A method for forming a storage node of a semiconductor device is provided to improve a device characteristic and reliability by avoid a leaning phenomenon of a storage node and a fine bridge in forming a cylindrical storage node. A conductive layer(106) is formed on a semiconductor substrate(100) having a storage node contact plug. The conductive layer is etched to form a hole(H1) for a storage node while a hole(H2) for supporting the storage node is formed between the holes for the storage node. An insulation layer is formed to cover the hole for the storage node and the hole for supporting the storage node. A mask pattern is formed on the insulation layer, covering a part of the hole for the storage node and the hole for the storage node adjacent to the hole for the storage node. The rest of the hole for supporting the storage node exposed by the mask pattern and the insulation layer are eliminated. The mask pattern is removed. The conductive layer can be made of a polysilicon layer.
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