发明名称 |
SURFACE PROCESSING METHOD FOR MOUNTING STAGE |
摘要 |
A surface processing method for mounting a stage is provided to form a mounting surface corresponding to a substrate by planarizing the mounting surface. A wafer(W) is transferred into a chamber and is mounted on a mounting surface of the ESC(ElectroStatic Chuck)(S31). A high DC voltage is applied to the electrostatic electrode plate so that the wafer is electrostatically attracted to the mounting surface(S32). A processing gas is turned into plasma in a processing space(S33). The remaining processing gas is exhausted out of the chamber and the wafer is transferred out from the chamber(S34). The integrated time period of the radio frequency electrical power is compared with a predetermined time period(S35).
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申请公布号 |
KR20080089256(A) |
申请公布日期 |
2008.10.06 |
申请号 |
KR20080028971 |
申请日期 |
2008.03.28 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
AOTO TADASHI;KIKUCHI EIICHIRO;HIGUMA MASAKAZU;HIGUCHI KIMIHIRO |
分类号 |
H01L21/687;H01L21/205;H01L21/3065 |
主分类号 |
H01L21/687 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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