| 摘要 |
PURPOSE:To reduce source or emitter-inductance while diminishing dispersion by joining a semiconductor element into the recessed section of a ceramic substrate in a semiconductor device for high frequency while an electrode for the semiconductor element and a conductor on the ceramic substrate are connected by a plane lead having a large surface area. CONSTITUTION:A semiconductor element 5 is joined into a recessed section 8 formed onto a ceramic substrate 1 while an electrode for the semiconductor element 5 and a conductor on the ceramic substrate 1 are connected by plane leads 7. Since a conductor surface on the ceramic substrate 1 and the surface of the semiconductor element 5 can be shaped on an approximately the same plane in the joining of the semiconductor element 5 into the recessed section 8 of the ceramic substrate 1, lead length can be made the shortest while lead length after connection for mounting the plane leads 7 can be kept constant. The semiconductor element 5 is supplied with power from a power lead, thus conducting desired signal amplification. An amplified signal is extracted to the outside from an output lead 3. A protruding section 9, only a nose of which is thinned, may be shaped in order to reduce lead inductance and ensure joining with an electrode for the semiconductor element 5 having a small area as the shape of the plane lead 7. |
