| 摘要 |
PURPOSE:To permit a dry-developing resist film which makes it possible to form a fine pattern, to be applied with a high reliability and efficiency, by plasma- polymerizing a silicon compound alone or in admixture with an organic compound having an unsaturated hydrocarbon bond in its molecular structure to form a resist film on a substrate. CONSTITUTION:A silicon compound represented by the formula, alone or in admixture with an organic compound having an unsaturated hydrocarbon bond in its molecular structure is plasma-polymerized to form a resist film on a substrate. Examples of the silicon compound represented by the formula include allyldimethylsilane, benzyltrimethylsilane, triethylsilane, diallylchlorosilane, and diethylsilane. Examples of the compound having an unsaturated hydrocarbon bond in its molecular structure include, alkadiene such as 1,4-butadiene or isoprene, dicarboxylic acid diallyl ester such as diallyl phthalate or diallyl isophthalate, triallyl cyanurate, triallyl isocyanurate, styrene, and divinylbenzene. The plasma-polymerized resist material is etched. In the formula: X represents methyl, ethyl etc.; Y hydrogen, halogen, methyl etc,; and Z methyl, ethyl, allyl etc. |
