| 摘要 |
PURPOSE:To facilitate manufacture of the semiconductor laser array eliminating the complicated mask process, and to contrive to form light emitting regions in high density by a method wherein a different kind conductor is diffused to the regions from the surface of a semiconductor layer to constitute the upper layer part of double hetero junction structure at the uppermost part up to reach respective active layers to perform laser action having double hetero junction structure at the stepped part. CONSTITUTION:Carrier implantation is performed mainly to the P-N junction parts 10a-10d formed at the active layers 5a-5d out of the respective P-N junction parts formed at the stepped part 6. Because both the sides in the lateral direction of the respective P-N junction parts 10a-10d are sandwiched between hetero barriers according to GaAlAs layers 4a-4e, implanted carriers are shut up therein to recombine efficiently without diffusing in the lateral direction, and inducedly emitted light is generated to form the light emitting regions 11a-11d. The intervals of the light emitting regions 11a-11d thereof are decided according to thickness of the GaAlAs layers 4a-4d. |
