| 摘要 |
PURPOSE:To form a metallic wiring layer excellently on a semiconductor substrate with an irregular surface shape by depositing a metal made contain in a reaction gas of a metallic element constituting a metallic layer in an atmosphere containing the reaction gas and a rare gas having atomic weight larger than that of the element. CONSTITUTION:A silicon substrate is etched by ions to form grooves 12 of 2mum width and approximately 1Mm depth, and the silicon substrate 11 with the irregular surface shape is obtained. Trimethyl aluminum as the reaction gas at the rate of 50cc/min, hydrogen at the rate of 50cc/min and argon gas at the rate of 200cc/min are introduced into a plasma CVD reaction pipe, and reacted. According to the method, an aluminum film 13 in which there is no large difference among both the side surface sections 15 of steep stepped differences 14 and flat sections as 0.3-0.5mum film thickness in the side surface sections and 0.8mum film thickness in the flat sections deposits. Consequently, decomposed aluminum collides with argon atoms in the reaction pipe and directional property is reduced by introducing argon gas as the rare gas of atomic weight larger than the atomic weight of aluminum deposited, thus forming the excellent metallic film on the semiconductor substrate with the irregular surface shape. |
