| 摘要 |
<p>PURPOSE:To provide the sensing function of high sensitivity without deteriorating the number of rewritings and reliability by connecting a voltage sensing type sense amplifier to a bit line connected to the one electrode of a memory transistor. CONSTITUTION:A memory cell array 1 consists of a memory cell 2 arranged in a row direction and a column direction. The sense amplifier 15 is disposed between a control gate line 7 and the bit line 9 at every column and the amplifier 15 consists of the transistors TRs Q14-Q17. An inverter is constituted of the TRs Q14, Q15 and TRs Q16 and Q17 to realize an FF constitution by connecting both input parts and output parts. In such a way, since the amplifier 15 is the FF constitution, a small potential difference generated between the line 7 and the line 9 can be effectively sensed at high speed and amplified. Therefore, a high speed reading can be executed in comparison with a current sensing type sense amplifier. Accordingly, the number of the rewritings of the cell and the reliability are not deteriorated.</p> |
