| 发明名称 |
COPPER INDIUM DISELENIDE-BASED PHOTOVOLTAIC DEVICE AND METHOD OF PREPARING THE SAME |
| 摘要 |
A copper indium diselenide (CIS)-based photovoltaic device includes a CIS-based solar absorber layer including copper, indium, and selenium. The CIS-based photovoltaic device further includes a substrate including a silicone layer formed from a silicone composition and a metal foil layer. The substrate, due to the presence of the silicone layer and the metal foil layer, is both flexible and sufficiently able to withstand annealing temperatures in excess of 500 °C to obtain maximum efficiency of the device. |
| 申请公布号 |
KR20090003334(A) |
申请公布日期 |
2009.01.09 |
| 申请号 |
KR20087027938 |
申请日期 |
2008.11.14 |
| 申请人 |
DOW CORNING CORPORATION;DOW CORNING TORAY CO., LTD.;ITN ENERGY SYSTEMS, INC. |
发明人 |
BARNARD THOMAS DUNCAN;HARIMOTO YUKINARI;HATANAKA HIDEKATSU;ITOH MAKI;KATSOULIS DIMITRIS ELIAS;SUTO MICHITAKA;ZHU BIZHONG;WOODS LAWRENCE M.;ARMSTRONG JOSEPH H.;RIBELIN ROSINE M. |
| 分类号 |
H01L31/0336;C08L83/04;H01L31/032;H01L31/072 |
主分类号 |
H01L31/0336 |
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