| 摘要 |
PURPOSE:To manufacture a ternary single-phase compound film by a direct sputtering method by forming a target into a ternary single-phase compound. CONSTITUTION:First raw materials blended so as to be formed into a composition of In3SbTe2 are charged into a graphite crucible, melted in an Ar atmosphere, and cast in a mold of the prescribed shape. Subsequently, this target is held in an Ar atmosphere at 450 deg.C for 2hr, followed by water cooling, by which the target is formed into a ternary single-phase compound of In3SbTe2. Since the directly sputtered film is formed into amorphous ternary single-phase compound, high-speed recording and erosion are made possible without initialization, and further, composition control is facilitated because this compound is of a single phase, and, as a result, the ternary single-phase compound of the desired composition can be obtained with superior reproducibility. |
