| 摘要 |
On the main surface of a semiconductor substrate 1 where charge-transfer devices designated CCD are produced, is formed a first port electrode 4 contiguous with the final port 3 of the CCD devices, this first port electrode 4 operating so as to transfer a first charge Qs1 transferred by the CCD devices to an impurity region 10 formed on the main surface of the semiconductor substrate 1. The impurity region 10 is connected to a second port electrode 6 so that the potential of the second port electrode 6 is identical to the potential of the impurity region 10. The second charge Qs2 which is greater than the first charge transferred is stored in a potential well formed in the semiconductor substrate 1 as a function of the potential of the second port electrode. A second charge is transferred and a voltage D0 dependent on the second charge is provided in the form of an output signal. <IMAGE>
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