LIGHT EMITTING DIODE DEVICE

摘要

A light emitting diode device is provided to maximize the number of the LED devices mounted on a single area of a package by omitting an additional electrode connection unit like a wire for connecting an electrode of the package and the electrode of the LED device. A light emitting structure(120) is formed by laminating an n type nitride semiconductor layer(121), an active layer(122), a p-type nitride semiconductor layer(123) on a substrate(110) successively. A first contact hole and a second contact hole are penetrated through the light emitting structure. A first insulating layer is formed in an inner wall of the first contact hole corresponding to the p type nitride semiconductor layer and the active layer. The n type electrode is buried in the first contact hole with the first insulating layer. A second insulating layer is formed in the inner wall of the second contact hole corresponding to the active layer and the n type nitride semiconductor layer. The p type electrode is buried in the second contact hole with the second insulating layer.