| 摘要 |
PURPOSE:To obtain a resonance tunnel transistor having a large current gain by a method wherein the bottom of energy in a conduction band of a base layer is made lower than the bottom of energy in a conduction band of an electrode layer. CONSTITUTION:An emitter 1 and a collector layer 3 sandwich a potential barrier and quantum well layer (a base 2); a metal for electrode use is formed on the emitter 1, the collector 3 and the base 2 as pads. For an operation, a resonance tunnel electron stream from the emitter 1 to the collector 3 is controlled by a base potential. The electron stream flows only when the base potential is at a definite value; however, because a level to be used for a base current out of an energy level in the base layer is different from a level used by the resonance tunnel electron stream, one part of the latter electron stream does not flow into the base current. As a result, a current gain (a resonance tunnel current/a base current) can be made large. As examples of semiconductor materials to be used, the emitter 1 and collector 3 made of InAlGaAs can be formed on a substrater of semi-insulating InP; the base 2 can be formed by InGaAs; the potential barrier 4 can be formed by InAlAs; however, III-V compounds other than these may be used. |
