| 摘要 |
PURPOSE:To obtain an X-ray mask whose deformation is little and which makes an alignment operation easy by adopting a two-layer structure where an a-SiC layer has been formed on a beta-SiC layer. CONSTITUTION:A beta-SiC layer whose deformation is little but whose surface is easy to roughen is covered with an a-SiC layer; whitish turbidity is reduced in order to make an alignment operation easy. The beta-SiC layer 12A and the a-SiC layer 12B are formed one after another on an Si substrate 11. Then, a SiC film is formed also on the rear of the Si substrate 11; the Si substrate 11 is etched by making use of an outer-frame SiC layer 13 as a mask and is removed in order to form an outer frame 11A. |
