发明名称 PRESSURE-CONTACT FLAT TYPE SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To uniformly distribute a stream of dissipated heat and to enhance a breakdown strength value to a surge of an electric current by a method wherein an electrode post is divided into two and a main electrode is pressed uniformly by a first electrode post having no cut-out part directly or via an electrode sheet. CONSTITUTION:An electrode post 21 on the side of a cathode of a center-gate type thyristor is divided into two, i.e., a first electrode post 21a which presses a cathode electrode 5 via an electrode sheet 3 and a second electrode post 21b which presses the first electrode post. The first electrode post 21a is composed of a doughnut-shaped copper block having no cut-out part and uniformly presses substantially a whole main face of the cathode electrode 5 via the electrode sheet 3. In order to guide a gate lead wire, the second electrode post 21b has a cut-out part 25 which has been opened on a face where the first electrode post is pressed.</p>
申请公布号 JPH01102933(A) 申请公布日期 1989.04.20
申请号 JP19870260868 申请日期 1987.10.16
申请人 TOSHIBA CORP 发明人 IWASAKI MASAMI;UETAKE YOSHINARI
分类号 H01L29/74;H01L21/52;H01L23/36;H01L23/48 主分类号 H01L29/74
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