发明名称 |
GROWTH OF SINGLE CRYSTAL CADMIUM-INDIUM-TELLURIDE |
摘要 |
A method for producing a large high-quality single crystal of Cadmium-Indium-Telluride is disclosed wherein a stoichiometric crystal is produced from a non-stoichiometric melt composition. An initial melt composition corresponding to approximately 62 mole % to 90 mole % In2Te3 and 38 mole % to 10 mole % CdTe, respectively, is prepared and sealed in an evacuated ampoule and then heated to completely melt the mixture. Growth of a single crystal of CdIn2Te4 is initiated and maintained from the non-stoichiometric melt mixture by lowering the melt through its corresponding phase-equilibrium melting point. Upon cooling to room temperature, the large single crystal so produced is removed from the ampoule. |
申请公布号 |
DE3568801(D1) |
申请公布日期 |
1989.04.20 |
申请号 |
DE19853568801 |
申请日期 |
1985.07.17 |
申请人 |
HUGHES AIRCRAFT COMPANY |
发明人 |
GENTILE, ANTHONY, L.;KYLE, NANSE, R.;HILL, FRED, W. |
分类号 |
C30B11/00;C30B11/02;C30B29/46 |
主分类号 |
C30B11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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