| 摘要 |
<p>A semiconducteur thin-film sensor using an n-type polycrystalline silicon layer as a pressure-sensitive resistance layer, and a method of producing the same. In this sensor, there are formed a pressure-sensitive resistance layer composed of n-type polycrystalline silicon, coarse and fine adjustment patterns for zero point adjustment composed of the same material, and a resistor for a temperature compensation circuit, that are all formed on a diaphragm. The n-type polycrystalline silicon layer is formed by maintaining the substrate at 500 to 650 °C. The coarse adjustment pattern and fine adjustment pattern for zero point adjustment, and the resistance for the temperature compensation circuit are formed through the same step as the one for forming the pressure-sensitive resistance layer.</p> |
