发明名称 DETECTING DEVICE OF INFRARED RAY AND MANUFACTURE THEREOF
摘要 PURPOSE:To make a device compact and thereby to facilitate handling thereof, by providing a pyroelectric element formed by holding a pyroelectric material film between first and second electrodes. CONSTITUTION:On the occasion of poling a pyroelectric element 35, a drain MD of MOSFET is connected to the ground, and a prescribed poling voltage is impressed on a second electrode 37 of the element 35. When a prescribed pulse is impressed on a gate MG of the MOSFET in this state, the MOSFET is turned ON, and accordingly a voltage for poling is impressed between a first gate 36 and the electrode 37 of the element 35. Therefore a pyroelectric material film 31 is poled to have a pyroelectric function. At the time when an infrared ray is detected, a prescribed reference voltage is impressed on the drain MD and the gate MG is connected to a reset terminal. When the infrared ray enters the material film 31, a change in potential occurs in the electrode 36, the potential of a gate JG of J-FET changes, and so a current flows between a drain JD and a source JS of the J-FET. Accordingly, a signal output in accordance with the incident infrared ray is taken out.
申请公布号 JPH01102321(A) 申请公布日期 1989.04.20
申请号 JP19870262374 申请日期 1987.10.16
申请人 HAMAMATSU PHOTONICS KK 发明人 TANAKA AKIO;YAMAMOTO AKINAGA
分类号 G01J1/02;G01J5/02;G01J5/34;H01L31/0264 主分类号 G01J1/02
代理机构 代理人
主权项
地址
您可能感兴趣的专利