SEMICONDUCTOR LASER DEVICE

摘要

PURPOSE:To enable an electrode which is formed above a semiconductor layer to be larger in width by a method wherein a region whose conductivity type is the same as that of the semiconductor layer is formed along the surface of the semiconductor layer deposited on an active layer of a light emitting region. CONSTITUTION:A high impurity concentrated n-type region 9 is formed between p-type regions 8 making its ends overlap the region 8. The n-type region 9 is formed, for instance, by injecting Si ions and its impurity concentration is set to such a degree that the part of the region 9 overlapping the p-type region 8 is made to be inverted to a p-type. The width of an electrode 7 is substantially independent of that of the active layer 3. By these processes, the width W of the active layer 3 of a light emitting region is made to be narrowed to 0.5mum and the width of the electrode 7 can be made to be much larger that 2mum as compared with that of the active layer 3.