FULLY TRANSPARENT MEMORY DEVICE

摘要

A transparent memory device is provided to perform transparency by forming a source/drain electrode with a transparent conductive oxide. In a transparent gate structure, a transparent charge storage layer(125) is positioned on a transparent substrate(105). A transparent oxide channel(135) is formed on the gate structure or between the transparent substrate and the gate structure. A source electrode(140) and a drain electrode(145) are connected to the transparent oxide channel, and are made of transparent conductive oxide. The source electrode and the drain electrode include one among ITO, IZO, and SnO2. The charge storage layer includes one among transparent conductive oxide, transparent semiconductor oxide, and transparent insulating material.