| 摘要 |
A manufacturing method of a semiconductor device is provided to improve electrical coupling property between a pad metal wiring and a top metal wiring by removing a particle remaining on an interface with a sputtering or an excimer laser. A plurality of transistors is formed on a substrate(101). A first metal layer is deposited on a front of the substrate. A plurality of metal wirings(211, 212) is formed on the substrate. An insulating layer(421, 422) is formed on the front of the substrate including the metal wiring. A part of the insulating layer positioned on a pad region is removed in order to expose a pad metal wiring positioned on the pad region among the metal layer wirings. A particle of a surface of the pad metal wiring is removed. A top metal wiring is formed on a top of the insulating layer in order to be connected to the pad metal wiring.
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