| 摘要 |
PURPOSE:To prevent a laser from decreasing in an optical output and a light emitting efficiency by a method wherein a stripe-like multilayer thin film containing an active layer is formed on one primary face of a semi-insulating substrate and a thin film, whose conductivity type is the same as that of a clad layer comprised in the multilayer thin film, is formed adjacently to at least one side of the multilayer thin film. CONSTITUTION:A laser device is constructed in such a manner that a multilayer thin film of double-hetero structure comprising a multiple quantum well layer as an active layer 3 is formed on a substrate 1 and a p-type region 8 is formed on the part of the substrate 1 other than a stripe-like laser region W in width so as to be contacted with the substrate 1, so that carriers are directly injected into the active layer 3 from the p-type region 8 and also through a p-type clad layer 2. Therefore, a series resistance of the active layer is not increase, consequently heat release is restrained. In result, the decrease in and optical output and a light emitting efficiency are made difficult to occur. |
