MANUFACTURE OF FILM

摘要

PURPOSE:To remove a film formed on a wall part and a powder applied to the wall part inside a reaction chamber and a resonance space by a method wherein the inner wall of a film formation apparatus by means of electron cyclotron resonance is etched by using the electron cyclotron resonance before and after formation of the film. CONSTITUTION:A film is formed by using an electron cyclotron resonance type plasma CVD apparatus while a pressure inside a reaction chamber 1 and a resonance space is set at 1X10<-3>-1X10<-4>Torr; after that, nitrogen fluoride (NF3 as a representative) is supplied through a line 18; an etching operation is executed at a pressure of 1X10<-2>-1Torr which is more than the pressure during formation of the film. Microwaves from an oscillator 3 are supplied to the resonance space 2 through a quartz window 29; a magnetic field is impressed by air-core coils 5, 5'. The etching operation is to be concentrated on the film applied inside the resonance space and inside the reaction chamber in accordance with a kind and an applied degree of the film.