ELECTROSTATIC LATENT IMAGE CARRIER

摘要

PURPOSE:To improve dark resistance value, the life time of a light carrier and photoresponsiveness by specifying the difference in the optical forbidden band width in at least one boundary face of the adjacent thin layers of the respective components in the multiple layers of photoconductive layers essentially consisting of Si or Ge. CONSTITUTION:The photoconductive layers consist of material essentially consisting of the non-single crystalline Si or non-single crystalline Ge and are constituted of the multiple layers consisting of >=3 groups of the thin layers of the respective components having the different optical forbidden band widths. The difference in the optical forbidden band width in at least one boundary face of the adjacent thin layers of the respective components in the multiple layers is specified to >=0.01eV and <=0.5eV. The dark attenuation rate of the surface charge applied at the time of electrostatic charge is thereby lowered; in addition, the residual potential on the photogenerated carrier is lowered and the photoresponsiveness is improved.