发明名称 BONDING OF WAFER
摘要 PURPOSE:To uniformly bond a wafer in high flatness, by evacuating the opposite side of the wax coated face of the wafer in vacuum, curving the wafer, bringing the wafer into contact with a carrier plate, raising pressure at the opposite side of the wax coated face and bringing the wax coated face to the plate. CONSTITUTION:The opposite side of the wax 13 coated face of a wafer 12 is evacuated in vacuum, the face at the opposite side of the wax coated face is supported and the wafer 12 is curved in such a way that the wax coated face becomes a protruded spherical surface. The top of the wax coated face of spherical surface is brought into contact with a carrier plate 14. Then pressure at the opposite side of the wax coated face of the wafer 12 is raised, the wax coated face is brought into contact with a carrier plate 14 from the top of the wax coated face of spherical surface to the peripheral part and the wafer 12 is placed on the carrier plate 14.
申请公布号 JPH01101386(A) 申请公布日期 1989.04.19
申请号 JP19870258054 申请日期 1987.10.13
申请人 MITSUBISHI METAL CORP;JAPAN SILICON CO LTD 发明人 MINAMI HIDEAKI
分类号 B23Q3/08;B24B37/04;B24B37/30;C06B31/30;C06D5/00;C09J5/00 主分类号 B23Q3/08
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