| 摘要 |
<p>A crystal formation method is disclosed which is a crystal growth method comprising feeding two or more kinds of reactive starting gases alternately into a crystal formation treatment space having a substrate with a non-nucleation surface (SNDS) having small nucleation density and a nucleation surface (SNDL) having sufficiently small area for crystal growth only from a single nucleus, and larger nucleation density (NDL) than the nucleation density (NDS) of said non-nucleation surface (SNDS) being arranged adjacent to each other arranged therein, thereby permitting a monocrystal to grow selectively from said single nucleus, characterized in that when one of the starting gases is changed over to the other starting gas, the reaction vessel is once evacuated internally to 10<-><2> Torr or less.</p> |
