发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING |
摘要 |
A semiconductor memory device includes: a first n-type transistor; a first p-type transistor; a first wiring layer having a first interconnecting portion for connecting a drain of the first n-type transistor and a drain of the first p-type transistor; and a second wiring layer having a first conductive portion electrically connected to the first interconnecting portion. |
申请公布号 |
US2009152641(A1) |
申请公布日期 |
2009.06.18 |
申请号 |
US20080331806 |
申请日期 |
2008.12.10 |
申请人 |
FUJITSU MICROELECTRONICS LIMITED |
发明人 |
OHKAWA NARUMI |
分类号 |
H01L27/11;H01L21/44;H01L21/8244 |
主分类号 |
H01L27/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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