SEMICONDUCTOR PROCESSING INVOLVING ION IMPLANTATION
摘要
<p>A molecular beam epitaxial method of fabricating a semiconductor device is disclosed wherein the dopant is implanted by establishing a plasma containing ions of the dopant and the ions are coupled through a drift chamber to impinge on the growing substrate surface. The plasma formed in the ion gun has ions of boron and arsenic and therefore the dopants selected for implantation can be determined by setting a mass filter present in the ion gun. A change to the dopant of the opposite conductivity type can be accomplished in seconds by simply readjusting the mass filter in the ion gun.</p>
申请公布号
EP0081550(B1)
申请公布日期
1989.04.19
申请号
EP19820901944
申请日期
1982.05.13
申请人
WESTERN ELECTRIC COMPANY, INCORPORATED
发明人
FINEGAN, SEAN NG.;MCFEE, JAMES HOFFMAN;SWARTZ, ROBERT GERALD;VOSHCHENKOV, ALEXANDER MICHAEL