| 摘要 |
An electrostatic chuck structure according to example embodiments of the present invention may include at least one specific region of a conductor having a thickness relatively smaller than those of other regions, at least one specific region of a dielectric having a thickness relatively larger than those of other regions, or at least one specific region of a conductor having a thickness relatively smaller than those of other regions and at least one specific region of a dielectric having a thickness relatively larger than those of other regions. Therefore, etching rate and CD uniformity can be improved during a semiconductor manufacturing process.
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