| 摘要 |
<p>An input protector device for a semiconductor device such as a CMOS device, in which a first resistor is formed on an insulating film of a semiconductor substrate, and a second resitor is formed of an impurity diffusion region in the substrate, the first and second resistors and a capacitor being coupled to one another in series to constitute a filter circuit, and in which first and second diodes each cooperated with at least one of the first and second resistors, by-pass noises having low and high voltages, respectively, and a high frequency noise is cut by the filter circuit, thereby effectively preventing latchup.</p> |
