| 摘要 |
PURPOSE:To suppress generation of large noise currents and to allow high speed operation by forming a plurality of gates in an output transistor, and arranging wiring connection regions on both ends of each of such gates. CONSTITUTION:A P-type diffusion layer 1 and an N-type diffusion layer 2 are formed on a substrate, polycrystalline silicon gates being arranged thereupon. Wiring connection regions 3a consisting of polycrystalline silicon is arranged on both ends of each of such polycrystalline silicon gates. By this formation on both ends, a first Al layer 5c is wired so that it can be connected not only to the right side to the diffusion layers but also to both right and left sides in series. This allows the gates to be easily connected in parallel or in series, thereby further allowing to select a series connection which helps reduce noise, or a parallel connection which contributes to high speed operation, and further allowing a combination of both. |
