| 摘要 |
PURPOSE:To obtain an Si-containing ethylenic polymer, having the backbone chain constituted of specific structural units and a specified mol.wt. and capable of forming fine patterns with extremely high sensitivity even to near ultraviolet rays and exhibiting higher resistance to dry etching. CONSTITUTION:An Si atom-containing ethylenic polymer having the backbone chain constituted of structural units expressed by the formula and 3,000-1,000,000mol.wt. The above-mentioned ethylenic polymer is used as a resist composition by adding a bisazide [e.g. 4,4'-diazidochalcone or 2,6-di-(4'- azidobenzal)cyclohexanone] as a photocrosslinking agent in amount of normally 0.1-30wt.% based on the polymer. Alternatively, an organic film and a resist layer having a resist pattern are successively formed on a substrate and the above-mentioned resist layer is formed from the afore-mentioned ethylenic polymer by a method for forming the pattern according to a two-layer structural resist method using the above-mentioned resist pattern as a dry etching mask for the organic film. |
