| 摘要 |
PURPOSE:To regulate a conduction resistance and to improve noise margin by connecting a P-type transistor Tr and N-type Tr by two or more equal gate electrodes, and selecting the P-type Tr and N-type Tr to be used. CONSTITUTION:An integrated circuit device A has an N-type semiconductor region 2 formed on a P-type semiconductor substrate 1, three rows of P-type diffused regions 3a-3c, and two gate electrodes 5a, 5b formed through an insulating film between the regions 3a-3c. The device A has two P-type Trs commonly having a region 3b, three rows of N-type diffused regions 4a-4c, N-type diffused regions 4d-4f formed adjacently in three rows, and two gate electrodes 6a, 6b formed through an insulating film between the regions 4a-4f. Accordingly, the threshold value of input/output transmission characteristic at this time becomes near 1/2VDD. Thus, its noise margin is improved. |
