| 摘要 |
A memory device having a comparison function includes a plurality of unit cells. Each unit cell is composed of a memory cell, and first and second switching circuits, and a sense line. The first switching circuit is used for comparing input data D and stored data M, and is disposed between the sense line and ground. The second switching circuit is used for comparing input data D and stored data M, and is disposed serially in the sense line. When the stored data is larger than the input data, the output of the sense line becomes a "1" but when the stored data is smaller than the input data, the output of the sense line becomes "0". The memory device can then conduct a magnitude comparison between the stored data and the input data.
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