| 摘要 |
In a vertical MOSFET of a conductivity modulated type or a standard type, including an n epitaxial layer grown on a p+ or n+ substrate, a p type channel region, and an n+ source region, there is further provided a Schottky diode which is formed between the n epitaxial layer and a metal source electrode extending through the source region and channel region and reaching the epitaxial layer under the source and channel regions in order to prevent latch-up of a parasitic thyristor.
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