| 摘要 |
PURPOSE:To form a film pattern for obtaining an arbitrary serial connecting structure by employing a selective mask common for patterning of different layers for forming a photovoltaic element, and laminating at least two films by small movement of the position of the mask. CONSTITUTION:A selection mask 6 is set on a substrate, and an a-Si film 3 is formed by a plasma CVD method. The shape of the pattern coincides with a pattern. Further, the mask 6 is moved in a direction not parallel designated by an arrow 71 without removing with the two sides 11, 12 of a substrate 1 as references, a rear face electrode film 4 is formed by a metal depositing method. The shape of the pattern of the electrode film coincides with the pattern of the mask 6. As a result, the film 4 is superposed on a section 45 displaced from above the film 3 by the movement of the mask 6 to the extension 52 of a transparent electrode film 2, and a photovoltaic element having a serial connecting structure is formed. |
