| 摘要 |
<p>PURPOSE: To quickly and efficiently measure the electric characteristics of a thin film transistor(TR) by providing the probe board with a 1st probe card connected to a gate line terminal, a 2nd probe card connected to a drain terminal and a 3rd probe card connected to an electrode connecting all source electrodes in common. CONSTITUTION: A gate line probe card 17 is provided with a probe 17', and at the time of setting up a TFT panel 24 on the probe board 16, the probe 17' is connected to a gate line terminal 20' formed on the panel 24. A drain probe card 18 is provided with a probe 18', and at the time of setting up the panel 24, the probe 18' is connected to a drain line terminal 21' formed on the panel 24. A probe 19 is fixed on a prescribed position of the board 16 and the tip 19a of the probe 19 is abutted upon a transparent electrode 22 formed in a range indicated by a dotted line on the panel 24. Consequently the electric characteristics of the thin film TR can be quickly measured.</p> |
